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Possible Answers:
SAE.
Last seen on: The New Yorker Monday, March 6, 2023 Crossword Answers
Random information on the term “SAE”:
Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO2 or Si3N4) deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask. SAE can be executed in various epitaxial growth methods such as molecular beam epitaxy (MBE), metalorganic vapour phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). By SAE, semiconductor nanostructures such as quantum dots and nanowires can be grown to their designed places.
The mask used in SAE is usually amorphous dielectric such as SiO2 or SiN4 which is deposited on the semiconductor substrate. The patterns (holes) in the mask are fabricated using standard microfabrication techniques lithography and etching. Variety of lithography and etching techniques can be implemented to SAE mask fabrication. Suitable techniques depend on the pattern feature size and used materials. Electron beam lithography is widely used due to its nanometer resolution. The mask should withstand the high temperature growth conditions of semiconductors in order to limit the growth to the patterned holes in the mask.